Datasheet > SI4435BDY_1

SI4435BDY_1

更新时间： 2024-11-23 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	95K
描述
P-Channel 30-V (D-S) MOSFET

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中文翻译

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SI4435BDY_1 数据手册

Si4435BDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D Advanced High Cell Density Process

Available

D Lead (Pb)-Free Version is RoHS

0.020 @ V = −10 V

−9.1

−6.9

Compliant

−30

0.035 @ V = −4.5

APPLICATIONS

D Load Switches

D Battery Switch

SO-8

Top View

P-Channel MOSFET

Ordering Information: Si4435BDY-T1

Si4435BDY-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−30

"20

= 25_C

= 70_C

−7

−9.1

−7.3

Continuous Drain Current (T = 150_C)

−5.6

Pulsed Drain Current

−50

continuous Source Current (Diode Conduction)

−2.1

2.5

−1.25

1.5

= 25_C

= 70_C

Maximum Power Dissipation

1.6

0.9

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1 ” x 1” FR4 Board.

Document Number: 72123

S-50694—Rev. C, 18-Apr-05

www.vishay.com

12 3 4 5 6

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