SI4435BDY

更新时间： 2024-09-14 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管 PC
页数	文件大小	规格书
3页	243K
描述
P-Channel 30-V (D-S) MOSFET

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技术参数
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SI4435BDY 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.82	Samacsys Confidence：	3
Samacsys Status：	Released	Samacsys PartID：	2348563
Samacsys Pin Count：	8	Samacsys Part Category：	MOSFET (P-Channel)
Samacsys Package Category：	Small Outline Packages	Samacsys Footprint Name：	SO8
Samacsys Released Date：	2019-07-29 12:04:37	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	7 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2.5 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

SI4435BDY 数据手册

SPICE Device Model Si4435BDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

CHARACTERISTICS

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the p-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0-V to 10-V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

www.vishay.com

Document Number: 72297

S-51095Rev. B, 13-Jun-05

12 3

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与SI4435BDY相关器件

型号	品牌	获取价格	描述	数据表
SI4435BDY_1	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI4435BDY-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o
SI4435BDY-T1	VISHAY	获取价格	Transistor,
SI4435BDY-T1-E3	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI4435BDY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-o
SI4435DDY	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI4435DDY-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
SI4435DDY-T1-GE3	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
SI4435DY	FAIRCHILD	获取价格	30V P-Channel PowerTrench MOSFET
SI4435DY	INFINEON	获取价格	Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm