SI4435DY

更新时间： 2024-09-14 22:43:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	93K
描述
30V P-Channel PowerTrench MOSFET

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替代型号

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SI4435DY 数据手册

October 2001

SI4435DY

30V P-Channel PowerTrench^ÒMOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gave drive

voltage ratings (4.5V – 25V).

· –8.8 A, –30 V

R_DS(ON)= 20 mW @ V_GS= –10 V

R_DS(ON)= 35 mW @ V_GS= –4.5 V

· Low gate charge (17nC typical)

· Fast switching speed

Applications

· Power management

· Load switch

· High performance trench technology for extremely

low R_DS(ON)

· Battery protection

· High power and current handling capability

SO-8

Pin 1SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

–30

V_GSS

I_D

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 1a)

–8.8

–50

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

1.2

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_qJA

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

SI4435DY

13’’

12mm

2500 units

Ó2001 Fairchild Semiconductor Corporation

SI4435DY Rev D1(W)

12 3 4 5

中文翻译

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SI4435DY 替代型号

型号	品牌	替代类型	描述	数据表
NDS9953A	FAIRCHILD	类似代替	Dual P-Channel Enhancement Mode Field Effect Transistor
FDS4435BZ	FAIRCHILD	类似代替	30 Volt P-Channel PowerTrench MOSFET
FDS4953	FAIRCHILD	类似代替	Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

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