Si4434ADY
Vishay Siliconix
www.vishay.com
N-Channel 250 V (D-S) MOSFET
FEATURES
• ThunderFET® power MOSFET
SO-8 Single
D
5
D
6
• 100 % Rg tested
D
7
• Material categorization
D
8
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converters
• Boost converters
• LED backlighting
D
4
G
3
S
2
S
Top View
G
• PD switch
Marking code: 4848A
• Load switch
PRODUCT SUMMARY
VDS (V)
S
250
0.150
0.170
8.6
N-Channel MOSFET
RDS(on) max. () at VGS = 10 V
RDS(on) max. () at VGS = 7.5 V
Qg typ. (nC)
ID (A) d
4.1
Configuration
Single
ORDERING INFORMATION
Package
SO-8
Si4434ADY-T1-GE3
Lead (Pb)-free and halogen-free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
250
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
4.1
TC = 70 °C
TA = 25 °C
TA = 70 °C
3.3
Continuous drain current (TJ = 150 °C)
ID
2.8 a, b
2.3 a, b
25
A
Pulsed drain current (t = 100 μs)
IDM
IS
T
C = 25 °C
5
Continuous source-drain diode current
TA = 25 °C
2.4 a, b
Single pulse avalanche current
Single pulse avalanche energy
IAS
12
L = 0.1 mH
EAS
7.2
mJ
W
T
C = 25 °C
6
TC = 70 °C
TA = 25 °C
TA = 70 °C
3.8
Maximum power dissipation
PD
2.9 a, b
1.9 a, b
-55 to +150
Operating junction and storage temperature range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a, c
SYMBOL
RthJA
TYPICAL
MAXIMUM
UNIT
t 10 s
Steady state
36
16
43
21
°C/W
Maximum junction-to-foot (drain)
RthJF
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. Maximum under steady state conditions is 84 °C/W
d. TC = 25 °C
S17-1737-Rev. A, 20-Nov-17
Document Number: 76230
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000