SI4435DDY

更新时间： 2024-11-19 12:27:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	279K
描述
P-Channel 30-V (D-S) MOSFET

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SI4435DDY 数据手册

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Si4435DDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

_D(A)^d

Definition

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

•

TrenchFET^®Power MOSFET

Compliant to RoHS Directive 2002/95/EC

0.024 at V_GS= - 10 V

0.035 at V_GS= - 4.5 V

- 11.4

- 9.4

- 30

15 nC

APPLICATIONS

•

Load Switches

•

Battery Switch

SO-8

Top View

Ordering Information: Si4435DDY-T1-E3 (Lead (Pb)-free)

Si4435DDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

Limit

- 30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

T_A= 70 °C

- 11.4

- 9.1

- 8.1^{a, b}

- 6.5^{a, b}

- 50

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current

- 4.1

- 2.0^{a, b}

_C= 25 °C

_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Avalanche Current

- 20

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

_C= 25 °C

_C= 70 °C

_A= 25 °C

5.0

3.2

P_D

Maximum Power Dissipation

2.5^{a, b}

1.6^{a, b}

- 55 to 150

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, c}

t ≤ 10 s

Steady State

°C/W

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T_C= 25 °C.

Document Number: 68841

S09-0863-Rev. C, 18-May-09

www.vishay.com

12 3 4 5 6 7...10

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与SI4435DDY相关器件

型号	品牌	获取价格	描述	数据表
SI4435DDY-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal
SI4435DDY-T1-GE3	VISHAY	获取价格	P-Channel 30-V (D-S) MOSFET
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SI4435DY	INFINEON	获取价格	Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
SI4435DY	ONSEMI	获取价格	30V P 沟道 PowerTrench® MOSFET -8.8A，20mΩ
SI4435DY	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
SI4435DY	KEXIN	获取价格	P-Channel MOSFET
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SI4435DYPBF	INFINEON	获取价格	HEXFET Power MOSFET