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SI4431DY_NL

更新时间: 2024-09-13 20:05:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 92K
描述
Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

SI4431DY_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.63
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):6.3 A最大漏极电流 (ID):6.3 A
最大漏源导通电阻:0.032 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI4431DY_NL 数据手册

 浏览型号SI4431DY_NL的Datasheet PDF文件第2页浏览型号SI4431DY_NL的Datasheet PDF文件第3页浏览型号SI4431DY_NL的Datasheet PDF文件第4页浏览型号SI4431DY_NL的Datasheet PDF文件第5页 
January 2001  
Si4431DY  
P-Channel Logic Level PowerTrench MOSFET  
General Description  
Features  
This P-Channel Logic Level MOSFET is produced  
–6.3 A, –30 V. RDS(ON) = 0.032 @ VGS = -10 V  
using  
Fairchild  
Semiconductor's  
advanced  
PowerTrench process that has been especially tailored  
to minimize on-state resistance and yet maintain  
superior switching performance.  
R
DS(ON) = 0.05 @ VGS = -4.5 V  
Low gate charge  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
Fast switching speed  
High performance trench technology for extremely  
Applications  
low RDS(ON)  
DC/DC converter  
Load switch  
High power and current handling capability  
Motor Drive  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
–30  
Units  
V
V
A
VGSS  
Gate-Source Voltage  
±20  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
-6.3  
-40  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
2.5  
PD  
W
1.2  
1.0  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
Thermal Resistance, Junction-to-Case  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
4431  
Si4431DY  
13’’  
12mm  
2500 units  
Si4431DY Rev A  
2001 Fairchild Semiconductor International  

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