SI4427BDY-T1

更新时间： 2024-02-12 17:40:09

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	48K
描述
P-Channel 30-V (D-S) MOSFET

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SI4427BDY-T1 数据手册

Si4427BDY

Vishay Siliconix

New Product

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.0105 @ V = -10 V

-12.6

-11.5

-9.2

-30

0.0125 @ V = -4.5

0.0195 @ V = -2.5

SO-8

Top View

Ordering Information: Si4427BDY

Si4427BDY-T1 (with Tape and Reel)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

"12

= 25_C

= 70_C

-9.7

-7.7

-12.6

-10.1

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

-50

continuous Source Current (Diode Conduction)

-2.5

2.5

-1.3

1.5

= 25_C

= 70_C

Maximum Power Dissipation

1.6

0.9

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72295

S-31411—Rev. A, 07-Jul-03

www.vishay.com

12 3 4 5

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