是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.3 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 9.4 A | 最大漏源导通电阻: | 0.0105 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4429EDY | VISHAY |
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P-Channel 30-V (D-S) MOSFET |
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SI4429EDY-T1 | VISHAY |
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Small Signal Field-Effect Transistor, 9.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |
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SI4429EDY-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 9.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal |
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SI4430 | SILICON |
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Silicon Laboratonies SI4432/31/30 highly-integrated, single chip wireless ISM transceiver |
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SI4430-B1 | SILICON |
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Si4430/31/32 ISM TRANSCEIVER |
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SI4430-B1-FM | SILICON |
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Si4430/31/32 ISM TRANSCEIVER |
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SI4430-B1-FMR | SILICON |
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Telecom Circuit, 1-Func, QFN-20 |
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SI4430BDY | VISHAY |
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N-Channel, 30-V (D-S) MOSFET |
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SI4430BDY-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- |
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SI4430BDY-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- |
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