Datasheet > SI4427DY-T1

SI4427DY-T1

更新时间： 2024-01-31 15:36:17

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	82K
描述
P-Channel 30-V (D-S) MOSFET

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SI4427DY-T1 数据手册

Si4427DY

Vishay Siliconix

New Product

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

FEATURES

V_DS(V)

r_DS(on)(W)

I_D(A)

D TrenchFETr Power MOSFETs

0.0105 @ V = –10 V

–13.3

–12.2

–9.8

–30

0.0125 @ V = –4.5

0.0195 @ V = –2.5

SO-8

Top View

Ordering Information: Si4427DY-T1

Si4427DY-T1–E3 (Lead (Pb)-free)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–30

"12

= 25_C

= 70_C

–9.4

–7.5

–13.3

–10.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–50

continuous Source Current (Diode Conduction)

–2.5

3.0

–1.3

1.5

= 25_C

= 70_C

Maximum Power Dissipation

1.9

0.9

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71308

S-51452—Rev. B, 01-Aug-05

www.vishay.com

12 3 4 5

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