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SI4420DY-T1 PDF预览

SI4420DY-T1

更新时间: 2024-11-15 15:51:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 45K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI4420DY-T1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.29Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):9.5 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SI4420DY-T1 数据手册

 浏览型号SI4420DY-T1的Datasheet PDF文件第2页浏览型号SI4420DY-T1的Datasheet PDF文件第3页浏览型号SI4420DY-T1的Datasheet PDF文件第4页浏览型号SI4420DY-T1的Datasheet PDF文件第5页 
Si4420DY  
Vishay Siliconix  
N-Channel 30-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.009 @ V = 10 V  
"12.5  
"10.5  
GS  
30  
0.013 @ V = 4.5 V  
GS  
D
SO-8  
S
D
D
D
D
1
2
3
4
8
7
6
5
G
S
S
G
Top View  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
"20  
DS  
GS  
V
V
T
= 25_C  
= 70_C  
"12.5  
"10.0  
"50  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
2.3  
T
= 25_C  
= 70_C  
2.5  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.6  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
50  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 70647  
S-05840—Rev. C, 04-Mar-02  
www.vishay.com  
2-1  

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