Datasheet > SI4421DY

SI4421DY

更新时间： 2024-02-06 06:37:02

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威世 - VISHAY		/
页数	文件大小	规格书
5页	43K
描述
P-Channel 20-V (D-S) MOSFET

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SI4421DY 数据手册

Si4421DY

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.00875 @ V = -4.5 V

-14

-12

-11

D Game Station

-20

0.01075 @ V = -2.5

- Load Switch

0.0135 @ V = -1.8

SO-8

Top View

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-20

= 25_C

= 70_C

-10

-8

-14

Continuous Drain Current (T = 150_C)

-11.5

Pulsed Drain Current

-40

continuous Source Current (Diode Conduction)

-2.7

3.0

-1.36

1.5

= 25_C

= 70_C

Maximum Power Dissipation

1.9

0.95

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72114

S-03158—Rev. A, 17-Feb-03

www.vishay.com

12 3 4 5

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