SI4420BDY

更新时间： 2024-11-14 21:55:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
1页	105K
描述
N-Channel, 30-V (D-S) MOSFET

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中文翻译

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数据手册

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SI4420BDY 数据手册

Specification Comparison

Vishay Siliconix

Si4420BDY vs. Si4420DY

Description: N-Channel, 30-V (D-S) MOSFET

Package:

Pin Out:

SO-8

Identical

Part Number Replacements:

Si4420BDY-T1-E3 Replaces Si4420DY-T1-E3

Si4420BDY-T1-E3 Replaces Si4420DY-T1

Summary of Performance:

The Si4420BDY is the replacement to the original Si4420DY; both parts perform identically, including limits to the parametric

tables below.

ABSOLUTE MAXIMUM RATINGS (T_A= 25^oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

V_DS

Si4420BDY

Si4420DY

Unit

Drain-Source Voltage

Gate-Source Voltage

+20

13.5

10.8

+20

13.5

10.8

V_GS

T_A= 25°C

T_A= 70°C

Continuous Drain Current

Pulsed Drain Current

I_D

I_DM

I_S

Continuous Source Current

(MOSFET Diode Conduction)

2.3

2.7

2.5

1.6

3.0

1.9

T_A= 25°C

T_A= 70°C

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

Maximum Junction-to-Ambient

-55 to 150

°C

T_j& T_stg

R_thJA

°C/W

SPECIFICATIONS (T_J= 25^OC UNLESS OTHERWISE NOTED)

Si4420BDY

Si4420DY

Typ

Parameter

Symbol

Unit

Min

Typ

Max

Min

Max

Static

Gate-Threshold Voltage

1.0

3.0

+100

1.0

2.0

3.0

+100

µA

V_GS(th)

I_GSS

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

I_DSS

V_GS= 10 V

I_D(on)

0.007

0.009

0.0085

0.011

0.0075

0.010

0.009

0.013

Drain-Source On-Resistance

Ω

r_DS(on)

V_GS= 4.5 V

Forward Transconductance

Diode Forward Voltage

g_fs

0.75

1.1

V_SD

Dynamic

Total Charge

Qgt

Qgs

Qgd

6.6

4.0

1.0

9.5

2.1

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

0.5

1.5

0.5

4.6

Ω

Switching

t_d(on)

t_r

t_d(off)

t_f

Turn-On Time*

125

Turn-Off Time*

Source-Drain Reverse Recovery Time

NS denotes parameter not specified

t_rr

Document Number 74060

06-May-05

www.vishay.com

中文翻译

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