Datasheet > Si4413ADY

Si4413ADY

更新时间： 2024-10-01 14:52:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	180K
描述
P-Channel 30-V (D-S) MOSFET

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Si4413ADY 数据手册

Si4413ADY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 15

Available

• TrenchFET^®Power MOSFET

0.0075 at V_GS= - 10 V

0.011 at V_GS= - 4.5 V

- 30

- 12.3

APPLICATIONS

•

Notebook

- Load Switch

- Battery Switch

SO-8

Top View

P-Channel MOSFET

Ordering Information: Si4413ADY-T1-E3 (Lead (Pb)-free)

Si4413ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 30

V_GS

T_A= 25 °C

T_A= 70 °C

- 15

- 10.5

- 8.3

Continuous Drain Current (T_J= 150 °C)^a

I_D

- 11.8

I_DM

I_S

Pulsed Drain Current

Continuous Source Current (Diode Conduction)^a

- 50

- 2.7

3.0

- 1.36

1.5

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^a

P_D

1.9

0.95

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

Steady State

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 73792

S-83096-Rev. C, 29-Dec-08

www.vishay.com

12 3 4 5 6 7 8

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