Datasheet > SI4418DY

SI4418DY

更新时间： 2024-11-14 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	71K
描述
N-Channel 200-V (D-S) MOSFET

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SI4418DY 数据手册

Si4418DY

Vishay Siliconix

New Product

N-Channel 200-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D 100% Rg Tested

APPLICATIONS

0.130 @ V = 10 V

200

0.142 @ V = 6.0 V

2.8

D Primary Side Switch

SO-8

Top View

Ordering Information: Si4418DY—E3

Si4418DY-T1—E3 (with Tape and Reel)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

200

"20

= 25_C

= 85_C

2.3

1.6

Continuous Drain Current (T = 150_C)

2.1

Pulsed Drain Current

Avalanche Current

L = 0.1 mH

Single Avalanche Energy (Duty Cycle v1%)

Continuous Source Current (Diode Conduction)

1.8

2.1

2.5

1.3

1.25

1.5

= 25_C

= 85_C

Maximum Power Dissipation

0.8

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72513

S-32412—Rev. B, 24-Nov-03

www.vishay.com

12 3 4 5

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