Datasheet > SI4413ADY_RC

SI4413ADY_RC

更新时间： 2024-09-30 06:11:35

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R-C Thermal Model Parameters

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SI4413ADY_RC 数据手册

Si4413ADY_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Foot

Junction to

RT1

Ambient

6.1480

Case

N/A

1.1236

4.4461

9.9726

5.3859

RT2

24.4080

26.0454

27.2274

RT3

RT4

Thermal Capacitance (Joules/°C)

Foot

Junction to

CT1

Ambient

22.0422 m

56.2436 m

3.5677

Case

N/A

9.0587 m

CT2

129.7015 m

138.7031 m

11.4484 m

CT3

CT4

2.3495

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 74307

Revision: 07-May-07

www.vishay.com

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