Datasheet > SI4412DYL99Z

SI4412DYL99Z

更新时间： 2024-11-16 05:46:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	267K
描述
Small Signal Field-Effect Transistor, 7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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SI4412DYL99Z 数据手册

June 1999

Si4412DY*

Single N-Channel Logic Level PowerTrench MOSFET

General Description

Features

This N-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench process

that has been especially tailored to minimize on-state

resistance and yet maintain superior switching

performance.

7 A, 30 V. R_DS(ON)= 0.028 Ω @ V_GS= 10 V

R_DS(ON)= 0.042 Ω @ V_GS= 4.5 V

Low gate charge.

Fast switching speed.

This device is well suited for low voltage and battery

powered applications where low in-line power loss and

fast switching are required.

High performance trench technology for extremely

low R_DS(ON)

Applications

High power and current handling capability.

Battery switch

Load switch

Motor controls

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1999 Fairchild Semiconductor Corporation

Si4412DY Rev. A

12 3

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