Datasheet > SI2309DS_08

SI2309DS_08

更新时间： 2024-11-09 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	96K
描述
P-Channel 60-V (D-S) MOSFET

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SI2309DS_08 数据手册

Si2309DS

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(Ω)

0.340 at V_GS= - 10 V

0.550 at V_GS= - 4.5 V

I_D(A)

Pb-free

- 1.25

- 1

Available

- 60

RoHS*

COMPLIANT

TO-236

(SOT-23)

Top View

Si2309DS (A9)*

* Marking Code

Ordering Information: Si2309DS-T1

Si2309DS-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

- 1.25

- 0.85

- 8

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

I_DM

I_AS

Pulsed Drain Current

Avalanche Current

L = 0.1 mH

T_A= 25 °C

T_A= 70 °C

- 5

1.25

Maximum Power Dissipation^{a, b}

P_D

0.8

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ≤ 5 s

100

166

Maximum Junction-to-Ambient^a

Maximum Junction-to-Lead^a

R_thJA

Steady State

130

°C/W

R_thJL

Notes:

a. Surface Mounted on FR4 Board.

b. t ≤ 5 s.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 70835

S-72216-Rev. C, 22-Oct-07

www.vishay.com

12 3 4 5

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