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SI2309DS_08 PDF预览

SI2309DS_08

更新时间: 2024-11-06 06:11:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 96K
描述
P-Channel 60-V (D-S) MOSFET

SI2309DS_08 数据手册

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Si2309DS  
Vishay Siliconix  
P-Channel 60-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (Ω)  
0.340 at VGS = - 10 V  
0.550 at VGS = - 4.5 V  
ID (A)  
Pb-free  
- 1.25  
- 1  
Available  
- 60  
RoHS*  
COMPLIANT  
TO-236  
(SOT-23)  
G
1
2
3
D
S
Top View  
Si2309DS (A9)*  
* Marking Code  
Ordering Information: Si2309DS-T1  
Si2309DS-T1-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 60  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
TA = 25 °C  
TA = 70 °C  
- 1.25  
- 0.85  
- 8  
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
A
IDM  
IAS  
Pulsed Drain Current  
Avalanche Current  
L = 0.1 mH  
TA = 25 °C  
TA = 70 °C  
- 5  
1.25  
Maximum Power Dissipationa, b  
PD  
W
0.8  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t 5 s  
100  
166  
60  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Leada  
RthJA  
Steady State  
Steady State  
130  
45  
°C/W  
RthJL  
Notes:  
a. Surface Mounted on FR4 Board.  
b. t 5 s.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 70835  
S-72216-Rev. C, 22-Oct-07  
www.vishay.com  
1

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