Datasheet > SI2312

SI2312

更新时间： 2024-11-19 18:09:39

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	427K
描述
SOT-23

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中文翻译

获取价格

数据手册

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SI2312 数据手册

SI2312

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra Low on-resistance:V_DS=20V,R_DS(ON)≤31.8mΩ@V_GS=4.5V,I_D=5A

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

Unit

Gate-source voltage

V_GS

I_D

±8

Continuous drain current

Pulsed drain current (Note 1)

Continuous Source-Drain Diode current

Power dissipation

I_DM

I_S

1.04

0.35

357

150

P_D

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

T_J

°C/W

°C

Storage temperature

T_STG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)DSS

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage (note 1)

VGS=0V, ID=250μA

V_DS=20V,

μA

I_DSS

I_GSS

VGS=0V

V_DS=0V,

±100 nA

V^GS=±8V

VDS=VGS, ID=250μA

VGS=4.5V, ID=5A

V^GS=2.5V, I^D=4.7A

VGS=1.8V, ID=4.3A

VDS=10V, ID=5A

f=1MHz

V_GS(th)0.45 0.7

1.0

31.8

35.6

41.4

mΩ

Drain-source on-resistance (note 1)

R_DS(ON)

mΩ

Forward transconductance (note 1)

Gate resistance

g_FS

R_g

0.5

4.8

Input capacitance

C_iss

C_oss

C_rss

t_d(on)

t_r

865

105

V_{DS=10V, VGS=0V, f=1MHz}

Output capacitance

Reverse transfer capacitance

Turn-on delay time

1.2

Turn-on rise time

VDD=30V, VGS=10V,

RGEN=1Ω, ID=1.5A

Turn-off delay time

t_d(off)

t_f

Turn-off fall time

Diode forward voltage (note 1)

IS=4A, VGS=0V

V_SD

0.75

Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .

1 / 4

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