Datasheet > SI2315

SI2315

更新时间： 2024-10-31 18:09:43

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	555K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2315 数据手册

SI2315

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-12V,R_DS(ON)≤55mΩ@V_GS=-8V,I_D=-3.5A

 Low on-resistance

 For DC to DC converter and Load switch applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

-12

Unit

Gate-source voltage

Continuous drain current

Pulsed drain current

Continuous Source-Drain Diode current

Power dissipation

Thermal resistance from Junction to ambient

Junction temperature

Storage temperature

V_GS

I_D

I_DM

I_S

P_D

R_θJA

T_J

±8

-3.5

-12

-1.6

1.25

100

150

°C/W

°C

T_STG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Symbo Min

Typ

Max Unit

Conditions

V^GS=0V, I^D=-10μA

V(BR)DSS

-12

-1

-10

±100

V_DS=-12V,

VGS=0V

V^GS=0V,T^J=55°C

VGS=±8V

Zero gate voltage drain current

I_DSS

Gate-body leakage current

Gate-threshold voltage

I_GSS

V_GS(th)-0.45

nA V_DS=0V,

VDS=VGS, ID=-250μA

-6

-3

V_DS≤-5V,

V^GS=-4.5V

V_DS≤-5V,

VGS=-2.5V

On-state Drain Current

I_D(on)

118

VGS=-4.5V, ID=-3.5A

VGS=-2.5V, ID=-3A

V^GS=-1.8V, I^D=-2A

VDS=-5V, ID=-3.5A

mΩ

Drain-source on-resistance (note 1)

R_DS(ON)

Forward transconductance (note 1)

Input capacitance(note 1)

Output capacitance(note 1)

Reverse transfer capacitance(note 1)

Turn-on delay time(note 1)

Turn-on rise time(note 1)

Turn-off delay time(note 1)

Turn-off fall time(note 1)

Total gate charge(note 1)

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

1225

260

130

V_{DS=-6V, VGS=0V, f=1MHz}

VDD=-6V,ID=-1A,

VGEN=-4.5V,Rg=6Ω,RL=6Ω

Gate-source charge(note 1)

Gate-drain charge(note 1)

Diode forward voltage (note 1)

Q_gs

Q_gd

V_SD

1.9

1.5

nC VDS=-6V,VGS=-4.5V,ID=-3.5A

-1.2

IS=-1.6A, VGS=0V

Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .

1 / 5

E-mail:hkt@heketai.com

12 3 4 5

中文翻译

下载PDF

与SI2315相关器件

型号	品牌	获取价格	描述	数据表
SI2315BDS	VISHAY	获取价格	P-Channel 1.8-V (G-S) MOSFET
SI2315BDS (KI2315BDS)	KEXIN	获取价格	P-Channel MOSFET
SI2315BDS-E3	VISHAY	获取价格	TRANSISTOR 3000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET
SI2315BDS-T1	VISHAY	获取价格	P-Channel 1.8-V (G-S) MOSFET
SI2315BDS-T1-E3	VISHAY	获取价格	TRANSISTOR 3000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, T
SI2315BDS-T1-GE3	VISHAY	获取价格	MOSFET P-CH 12V 3A SOT23-3
SI2315DS	VISHAY	获取价格	P-Channel 1.25-W, 1.8-V (G-S) MOSFET
SI2315DS-T1	VISHAY	获取价格	P-Channel 1.25-W, 1.8-V (G-S) MOSFET
SI2316	HOTTECH	获取价格	SOT-23
SI2316BDS	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET