Datasheet > SI2314

SI2314

更新时间： 2024-06-27 12:13:02

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	673K
描述
SOT-23

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中文翻译

获取价格

数据手册

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SI2314 数据手册

S I2314

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 V_DS=20V,R_DS(ON)≤33mΩ@V_GS=4.5V,I_D=4.9A

 Ultra Low on-resistance

 For Low power DC to DC converter application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0



Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

Unit

VDS

Gate-source voltage

V_GS

I_D

±12

4.9

Continuous drain current

Pulsed drain current (Note 1)

Continuous Source-Drain Diode current

Power dissipation

I_DM

I_S

P_D

1.25

100

150

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

T_J

°C/W

°C

Storage temperature

T_STG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

V(BR)DSS

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage (note 1)

μA V_DS=20V,

I_DSS

I_GSS

V_GS(th)0.45

VGS=0V

V_DS=0V,

±150 nA

VGS=±4.5V

0.95

V^DS=V^GS, I^D=250μA

^GS=4.5V, I^D=5A

mΩ

Drain-source on-resistance (note 1)

Forward transconductance (note 1)

R_DS(ON)

V^GS=2.5V, I^D=4.5A

^GS=1.8V, I^D=4.0A

mΩ

VDS=15V, ID=5A

g_FS

Q_g

11.0 14.0

1.5

2.1

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Q_gs

Q_gd

V_{DS=10V, VGS=4.5V, ID=5A}

t_d(on)

t_r

t_d(off)

t_f

t_rr

V_SD

0.53

1.4

13.5

5.9

0.8

2.2

1.2

VDD=10V, VGS=4.5V,

RGEN=6Ω, ID=1A, RL=10Ω

I^F=1A, dI/dt=100A/μs

IS=1A, VGS=0V

Source-Drain Reverse Recovery

Diode forward voltage (note 1)

0.8

Note:1. Pulse test: Pulse width ≤300µs, Duty cycle ≤ 2% .

1 / 4

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