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SI2312DS PDF预览

SI2312DS

更新时间: 2024-11-17 22:21:51
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 60K
描述
N-Channel 20-V (D-S) MOSFET

SI2312DS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
配置:Single最大漏极电流 (Abs) (ID):3.77 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e0
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.25 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SI2312DS 数据手册

 浏览型号SI2312DS的Datasheet PDF文件第2页浏览型号SI2312DS的Datasheet PDF文件第3页浏览型号SI2312DS的Datasheet PDF文件第4页 
Si2312DS  
Vishay Siliconix  
N-Channel 20-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.033 @ V = 4.5 V  
4.9  
4.4  
3.9  
GS  
0.040 @ V = 2.5 V  
GS  
20  
0.051 @ V = 1.8 V  
GS  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Ordering Information: Si2312DS-T1  
Top View  
Si2312DS (C2)*  
*Marking Code  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 sec  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
20  
V
"8  
T = 25_C  
A
4.9  
3.9  
3.77  
3.0  
A
a
Continuous Drain Current (T = 150__C)  
I
J
D
T = 70_C  
A
b
Pulsed Drain Current  
I
15  
15  
DM  
b
Avalanche Current  
I
AS  
L = 0.1 mH  
Single Avalanche Energy  
E
11.25  
1.0  
mJ  
A
AS  
a
Continuous Source Current (Diode Conduction)  
I
S
T = 25_C  
A
1.25  
0.80  
0.75  
0.48  
A
a
Power Dissipation  
P
W
D
T = 70_C  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
75  
120  
40  
100  
166  
50  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. Pulse width limited by maximum junction temperature  
Document Number: 71338  
S-31990—Rev. D, 13-Oct-03  
www.vishay.com  
1
 

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