是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 3.77 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 1.25 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI2312DS (KI2312DS) | KEXIN |
获取价格 |
N-Channel MOSFET | |
SI2312DS_05 | VISHAY |
获取价格 |
N-Channel 20 -V (D-S) MOSFET | |
SI2312DS-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI2312DS-T1 | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET | |
SI2312DS-T1-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI2312HE3 | MCC |
获取价格 |
Tape: 3K/Reel, 120K/Ctn.; | |
SI2312-TP | MCC |
获取价格 |
Small Signal Field-Effect Transistor, | |
SI2314 | HOTTECH |
获取价格 |
SOT-23 | |
SI2314EDS | VISHAY |
获取价格 |
N-Channel 20-V (D-S) MOSFET | |
SI2314EDS (KI2314EDS) | KEXIN |
获取价格 |
N-Channel MOSFET |