SI2312CDS

更新时间： 2024-11-18 09:26:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	131K
描述
N-Channel 20 V (D-S) MOSFET

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SI2312CDS 数据手册

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Si2312CDS

Vishay Siliconix

N-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^e

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

6^a

0.0318 at V_GS= 4.5 V

0.0356 at V_GS= 2.5 V

0.0414 at V_GS= 1.8 V

•

6^a

8.8 nC

• Compliant to RoHS Directive 2002/95/EC

5.6

APPLICATIONS

•

DC/DC Converters

•

Load Switch for Portable Applications

SOT-23

Marking Code

P5 XXX

Lot Traceability

and Date Code

Part # Code

Top View

Ordering Information: Si2312CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

6^a

5.1

5^{b, c}

4^{b, c}

_C= 25 °C

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

1.75

1.04^{b, c}

Continuous Source-Drain Diode Current

_C= 25 °C

2.1

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

1.3

1.25^{b, c}

0.8^{b, c}

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

100

Unit

Maximum Junction-to-Ambient^{b, d}

t ≤ 5 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 125 °C/W.

e. Based on T_C= 25 °C.

Document Number: 65900

S10-0641-Rev. A, 22-Mar-10

www.vishay.com

12 3 4 5 6 7

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