Datasheet > SI2312DS (KI2312DS)

SI2312DS (KI2312DS)

更新时间： 2024-11-19 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1660K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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SI2312DS (KI2312DS) 数据手册

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SMD Type

MOSFET

N-Channel Enhancement MOSFET

SI2312DS (KI2312DS)

SOT-23

Unit: mm

■ Features

+0.1

-0.1

2.9

+0.1

-0.1

0.4

● VDS (V) = 20V

● ID = 4.9 A (VGS =4.5V)

● RDS(ON) ＜ 33mΩ (VGS = 4.5V)

● RDS(ON) ＜ 40mΩ (VGS = 2.5V)

● RDS(ON) ＜ 51mΩ (VGS = 1.8V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Gate

2.Source

3.Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

5 sec

Steady State

Unit

VDS

Gate-Source Voltage

±8

4.9

3.9

3.77

3.0

Ta=25℃

Continuous Drain Current *1

Ta=70℃

Pulsed Drain Current

Avalanche Current

L=0.1mH

11.25

Single Avalanche Energy

1.25

0.8

0.75

0.48

Ta=25℃

Ta=70℃

Power Dissipation *1

100

166

Thermal Resistance.Junction- to-Ambient *1 t≤5 sec

Steady State

thJA

thJF

℃/W

Thermal Resistance.Junction-to-Foot

Junction Temperature

150

℃

Storage Temperature Range

-55 to 150

stg

*1 Surface Mounted on 1” x 1” FR4 Board.

*2 Pulse width limited by maximum junction temperature

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