SI2312BDS

更新时间： 2024-09-15 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	113K
描述
N-Channel 20-V (D-S) MOSFET

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SI2312BDS 数据手册

Si2312BDS

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free Option Available

V_DS(V)

R_DS(on)(Ω)

I_D(A)

5.0

Q_g(Typ.)

TrenchFET^®Power MOSFET

100 % R_gTested

0.031 at V_GS= 4.5 V

0.037 at V_GS= 2.5 V

0.047 at V_GS= 1.8 V

RoHS

4.6

7.5

COMPLIANT

4.1

TO-236

(SOT-23)

Top View

Si2312BDS (M2)*

* Marking Code

Ordering Information: Si2312BDS-T1-E3 (Lead (Pb)-free)

Si2312BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

_A= 70 °C

5.0

4.0

3.9

3.1

Continuous Drain Current (T_J= 150 °C)^a

I_D

Pulsed Drain Current^b

Avalanche Current^b

I_DM

I_AS

E_AS

I_S

L = 0.1 mH

Single Avalanche Energy

8.45

Continuous Source Current (Diode Conduction)^a

1.0

0.63

0.75

0.48

T_A= 25 °C

T_A= 70 °C

1.25

0.80

Power Dissipation^a

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

100

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot

R_thJA

Steady State

120

166

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Pulse width limited by maximum junction temperature.

Document Number: 73235

S-80642-Rev. B, 24-Mar-08

www.vishay.com

12 3 4 5

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