Datasheet > SI2312DS_05

SI2312DS_05

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	90K
描述
N-Channel 20 -V (D-S) MOSFET

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数据手册

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SI2312DS_05 数据手册

Si2312DS

Vishay Siliconix

N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D 1.8-V Rated

D RoHS Compliant

V_DS(V)

r_DS(on)(W)

I_D(A)

Q_g(Typ)

Pb-free

Available

0.033 @ V = 4.5 V

4.9

4.4

3.9

0.040 @ V = 2.5 V

11.2

0.051 @ V = 1.8 V

TO-236

(SOT-23)

Top View

Si2312DS (C2)*

*Marking Code

Ordering Information: Si2312DS-T1

Si2312DS-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

T = 25_C

4.9

3.9

3.77

3.0

Continuous Drain Current (T = 150__C)

T = 70_C

Pulsed Drain Current

Avalanche Current

L = 0.1 mH

Single Avalanche Energy

11.25

1.0

Continuous Source Current (Diode Conduction)

T = 25_C

1.25

0.80

0.75

0.48

Power Dissipation

T = 70_C

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

120

100

166

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Document Number: 71338

S-50574—Rev. E, 04-Apr-05

www.vishay.com

12 3 4 5

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