Datasheet > SI2316BDS

SI2316BDS

更新时间： 2024-11-17 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	108K
描述
N-Channel 30-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2316BDS 数据手册

New Product

Si2316BDS

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

• TrenchFET Power MOSFET

PRODUCT SUMMARY

I_D(A)^a

4.5

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

•

PWM Optimized

0.050 at V_GS= 10 V

0.080 at V_GS= 4.5 V

100 % R tested

RoHS

3.16 nC

COMPLIANT

3.4

APPLICATIONS

•

Battery Switch

•

DC/DC Converter

TO-236

(SOT-23)

Top View

Si2316DS (M6)*

*Marking Code

Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Unit

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

4.5

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.6

3.9^{b, c}

3.13^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

1.39

1.04^{b, c}

1.66

Continuous Source-Drain Diode Current

_C= 70 °C

1.06

P_D

Maximum Power Dissipation

1.25^{b, c}

0.8^{b, c}

T_A= 25 °C

T_A= 70 °C

°C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

≤ 5 sec

Steady State

100

°C/W

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 130 °C/W.

Document Number: 70445

S-71330-Rev. A, 02-Jul-07

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与SI2316BDS相关器件

型号	品牌	获取价格	描述	数据表
SI2316BDS-T1-E3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2316BDS-T1-GE3	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2316DS	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SI2316DS-E3	VISHAY	获取价格	TRANSISTOR 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET
SI2316DS-T1	VISHAY	获取价格	Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal
SI2316DS-T1-E3	VISHAY	获取价格	TRANSISTOR 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACK
SI2316DS-T1-GE3	VISHAY	获取价格	TRANSISTOR 2900 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND RO
SI2317	HOTTECH	获取价格	SOT-23
SI2317A	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-20V;持续漏极电流（Id）（在25°C
SI2318	HOTTECH	获取价格	SOT-23