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SI2318DS-T1 PDF预览

SI2318DS-T1

更新时间: 2024-09-14 22:36:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 73K
描述
N-Channel 40-V (D-S) MOSFET

SI2318DS-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.88配置:Single
最大漏极电流 (Abs) (ID):3 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1.25 W子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SI2318DS-T1 数据手册

 浏览型号SI2318DS-T1的Datasheet PDF文件第2页浏览型号SI2318DS-T1的Datasheet PDF文件第3页浏览型号SI2318DS-T1的Datasheet PDF文件第4页 
Si2318DS  
Vishay Siliconix  
New Product  
N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.045 @ V = 10 V  
3.9  
3.5  
GS  
D Stepper Motors  
D Load Switch  
40  
0.058 @ V = 4.5 V  
GS  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Ordering Information: Si2318DS-T1 (with Tape and Reel)  
Top View  
Si2318DS( C8)*  
*Marking Code  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 sec  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
DS  
V
GS  
40  
V
"20  
T = 25_C  
A
3.9  
3.1  
3.0  
2.4  
A
a, b  
Continuous Drain Current (T = 150_C)  
I
J
D
T = 70_C  
A
b
Pulsed Drain Current  
I
16  
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
0.8  
T = 25_C  
A
1.25  
0.8  
0.75  
0.48  
A
a, b  
Power Dissipation  
P
W
D
T = 70_C  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 5 sec  
Steady State  
Steady State  
75  
120  
40  
100  
166  
50  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. Pulse width limited by maximum junction temperature  
Document Number: 72322  
S-31731—Rev. A, 18-Aug-03  
www.vishay.com  
1
 

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