Datasheet > SI2319

SI2319

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	553K
描述
SOT-23

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2319 数据手册

SI2319

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-40V,R_DS(ON)≤96mΩ@V_GS=-10V,I_D=-3.0A

 Low on-resistance

 For DC to DC converter and Load switch applications

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

Value

-40

Unit

Gate-source voltage

V_GS

±20

T_A= 25°C

Continuous drain current(T_J= 150°C)

T_A= 70°C

-3.5

-2.8

-20

I_D

Pulsed drain current

Continuous Source-Drain Diode current

I_DM

I_S

-1.4

1.25

0.81

105

150

T_A= 25°C

Power dissipation

T_A= 70°C

P_D

Thermal resistance from Junction to ambient

Junction temperature

Storage temperature

R_θJA

T_J

T_STG

°C/W

°C

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbo Min

Typ

Max Unit

Conditions

V(BR)DSS

Drain-Source breakdown voltage

VGS=0V, ID=-250μA

-40

V_DS=-36V,

-1

-5

±100

-2.5

VGS=0V

Zero gate voltage drain current

I_DSS

I_GSS

VGS=0V,T_J= 85°C

Gate-body leakage current

Gate-threshold voltage(note 1)

nA V_DS=0V,

VGS=±20V

V_GS(th)

-0.8

mΩ

V^DS=V^GS, I^D=-250μA

100

500

V^GS=-10V, I^D=-3.0A

Drain-source on-resistance (note 1)

R_DS(ON)

VGS=-4.5V, ID=-2.8A

VDS=-15V, ID=-3.0A

110

Forward transconductance (note 1)

Input capacitance(note 1)

Output capacitance(note 1)

Reverse transfer capacitance(note 1)

Turn-on delay time(note 1)

Turn-on rise time(note 1)

Turn-off delay time(note 1)

Turn-off fall time(note 1)

Total gate charge(note 1)

g_FS

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

V_{DS=-15V, VGS=0V, f=1MHz}

nS VDD=-15V,ID=-1A,

VGEN=-4.5V,Rg=6Ω

Gate-source charge(note 1)

Gate-drain charge(note 1)

Diode forward voltage (note 1)

Q_gs

Q_gd

V_SD

1.5

2.0

-0.55

nC VDS=-15V,VGS=-10V,ID=-3.0A

IS=-1.3A, VGS=0V

-1.0

Note:1. Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 2% .

1 / 5

E-mail:hkt@heketai.com

12 3 4 5

中文翻译

下载PDF

与SI2319相关器件

型号	品牌	获取价格	描述	数据表
SI2319A	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C
SI2319CDS	VISHAY	获取价格	P-Channel 40 V (D-S) MOSFET
SI2319CDS-T1-GE3	VISHAY	获取价格	P-Channel 40 V (D-S) MOSFET
Si2319DDS	VISHAY	获取价格	P-Channel 40 V (D-S) MOSFET
SI2319DS	VISHAY	获取价格	P-Channel 40-V (D-S) MOSFET
SI2319DS (KI2319DS)	KEXIN	获取价格	P-Channel MOSFET
SI2319DS-T1	VISHAY	获取价格	P-Channel 40-V (D-S) MOSFET
SI2319DS-T1-E3	VISHAY	获取价格	P-Channel 40-V (D-S) MOSFET
SI2320DS	VISHAY	获取价格	N-Channel 200-V (D-S) MOSFET
SI2321	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;