SI2323DS-RC

更新时间： 2024-11-18 06:11:31

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R-C Thermal Model Parameters

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SI2323DS-RC 数据手册

Si2323DS_RC

Vishay Siliconix

R-C Thermal Model Parameters

DESCRIPTION

The parametric values in the R-C thermal model have

been derived using curve-fitting techniques. These

techniques are described in "A Simple Method of

Generating Thermal Models for a Power MOSFET"[1].

When implemented in P-Spice, these values have

matching characteristic curves to the Single Pulse

Transient Thermal Impedance curves for the

MOSFET.

R-C values for the electrical circuit in the Foster/Tank

and Cauer/Filter configurations are included.

Note:

For a detailed explanation of implementing these values in

P-SPICE, refer to Application Note AN609 Thermal Simulations Of

Power MOSFETs on P-SPICE Platform.

R-C THERMAL MODEL FOR TANK CONFIGURATION

R-C VALUES FOR TANK CONFIGURATION

Thermal Resistance (°C/W)

Junction to

RT1

Ambient

Case

N/A

65.0615

RT2

47.9253

RT3

41.1729

RT4

9.6980

Thermal Capacitance (Joules/°C)

Ambient

Junction to

CT1

Case

N/A

1.1655

CT2

17.3479 m

CT3

3.0586 m

CT4

582.7750 µ

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data

sheet of the same number for guaranteed specification limits.

Document Number: 73620

Revision 22-Aug-05

www.vishay.com

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