SI2333CDS

更新时间： 2024-11-07 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	104K
描述
P-Channel 12-V (D-S) MOSFET

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中文翻译

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SI2333CDS 数据手册

Si2333CDS

Vishay Siliconix

P-Channel 12-V (D-S) MOSFET

FEATURES

MOSFET PRODUCT SUMMARY

• TrenchFET^®Power MOSFET

_D(A)^a

- 5.1

- 4.5

- 3.9

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

0.035 at V_GS= - 4.5 V

0.045 at V_GS= - 2.5 V

0.059 at V_GS= - 1.8 V

APPLICATIONS

RoHS

COMPLIANT

- 12

9 nC

•

Load Switch

•

PA Switch

TO-236

(SOT-23)

Top View

Si2333CDS (O3)*

* Marking Code

Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

- 12

_C= 25 °C

_C= 70 °C

_A= 25 °C

- 7.1

- 5.7

- 5.1^{b, c}

- 4.0^{b, c}

- 20

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

- 1.0

- 0.63^{b, c}

2.5

Continuous Source-Drain Diode Current

_A= 25 °C

_C= 25 °C

T_C= 70 °C

_A= 25 °C

1.6

P_D

Maximum Power Dissipation

1.25^{b, c}

0.8^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

≤ 5 s

Steady State

100

°C/W

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 166 °C/W.

Document Number: 68717

S-81445-Rev. A, 23-Jun-08

www.vishay.com

12 3 4 5 6

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