5秒后页面跳转
SI2333DS PDF预览

SI2333DS

更新时间: 2024-11-17 22:43:15
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
5页 45K
描述
P-Channel 12-V (D-S) MOSFET

SI2333DS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.29Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:12 V
最大漏极电流 (ID):4.1 A最大漏源导通电阻:0.032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):240
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI2333DS 数据手册

 浏览型号SI2333DS的Datasheet PDF文件第2页浏览型号SI2333DS的Datasheet PDF文件第3页浏览型号SI2333DS的Datasheet PDF文件第4页浏览型号SI2333DS的Datasheet PDF文件第5页 
Si2333DS  
Vishay Siliconix  
New Product  
P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.032 @ V  
0.042 @ V  
0.059 @ V  
= -4.5 V  
= -2.5 V  
= -1.8 V  
-5.3  
- 4.6  
- 3.9  
GS  
GS  
GS  
D Load Switch  
D PA Switch  
-12  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2333DS (E3)*  
*Marking Code  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
5 sec  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
-12  
DS  
GS  
V
V
8
T
= 25_C  
= 70_C  
-4.1  
-3.3  
- 5.3  
-4.2  
A
a, b  
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
-20  
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
-1.0  
1.25  
0.8  
-0.6  
0.75  
0.48  
S
T
= 25_C  
= 70_C  
A
a, b  
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t
5 sec  
75  
120  
40  
100  
166  
50  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
Steady State  
Steady State  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
b. Pulse width limited by maximum junction temperature.  
Document Number: 72023  
S-22121—Rev. B, 25-Nov-02  
www.vishay.com  
1

与SI2333DS相关器件

型号 品牌 获取价格 描述 数据表
SI2333DS (KI2333DS) KEXIN

获取价格

P-Channel MOSFET
SI2333DS-E3 VISHAY

获取价格

TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, TO-236, 3 PIN, FET
SI2333DS-T1-E3 VISHAY

获取价格

Halogen-free According to IEC 61249-2-21
SI2333DS-T1-GE3 VISHAY

获取价格

TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND
SI2333-TP MCC

获取价格

Small Signal Bipolar Transistor,
SI2333-TP-HF MCC

获取价格

Small Signal Bipolar Transistor,
SI2335DS TI

获取价格

High-Vin, High-Efficiency Power Solution Using DC/DC Converter With DVFS
SI2335DS VISHAY

获取价格

P-Channel 12-V (D-S) MOSFET
SI2335DS (KI2335DS) KEXIN

获取价格

P-Channel MOSFET
SI2335DS-E3 VISHAY

获取价格

TRANSISTOR 3200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, TO-236, 3 PIN, FE