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SI2337DS-T1-E3 PDF预览

SI2337DS-T1-E3

更新时间: 2024-11-07 06:11:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
7页 110K
描述
P-Channel 80-V (D-S) MOSFET

SI2337DS-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:1.7
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:265756Samacsys Pin Count:3
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236)Samacsys Released Date:2018-01-12 13:13:27
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:80 V最大漏极电流 (Abs) (ID):2.2 A
最大漏极电流 (ID):0.0012 A最大漏源导通电阻:0.27 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-50 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI2337DS-T1-E3 数据手册

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New Product  
Si2337DS  
Vishay Siliconix  
P-Channel 80-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
rDS(on) (Ω)  
Qg (Typ)  
I
D (A)a  
- 2.2  
0.270 at VGS = - 10 V  
0.303 at VGS = - 6 V  
- 80  
7
RoHS  
- 2.1  
COMPLIANT  
TO-236  
(SOT-23)  
S
G
1
2
3
D
G
S
Top View  
Si2337DS (E7)*  
*Marking Code  
D
P-Channel MOSFET  
Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 80  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
TC = 25 °C  
TC = 70 °C  
- 2.2  
- 1.75  
- 1.2b, c  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
- 0.96b, c  
TA = 70 °C  
A
IDM  
IS  
- 7  
Pulsed Drain Current  
TC = 25 °C  
- 2.1  
Continuous Source-Drain Diode Current  
- 0.63b, c  
11  
TA = 25 °C  
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
6.0  
2.5  
1.6  
mJ  
W
Single-Pulse Avalanche Energy  
TC = 25 °C  
TC = 70 °C  
PD  
Maximum Power Dissipation  
0.76b, c  
TA = 25 °C  
0.48b, c  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 50 to 150  
°C  
260  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 10 sec  
120  
40  
166  
50  
°C/W  
RthJF  
Steady State  
Maximum Junction-to-Foot (Drain)  
Notes:  
a. Package limited.  
b. Surface Mounted on 1" x 1" FR4 Board.  
c. t = 10 sec.  
d. Maximum under Steady State conditions is 166 °C/W.  
Document Number: 73533  
S-71597-Rev. C, 30-Jul-07  
www.vishay.com  
1

SI2337DS-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI2337DS-T1-GE3 VISHAY

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P-Channel 80-V (D-S) MOSFET

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