Datasheet > SI2337DS

SI2337DS

更新时间： 2024-11-07 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	110K
描述
P-Channel 80-V (D-S) MOSFET

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Si2337DS

Vishay Siliconix

P-Channel 80-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

r_DS(on)(Ω)

Q_g(Typ)

_D(A)^a

- 2.2

0.270 at V_GS= - 10 V

0.303 at V_GS= - 6 V

- 80

RoHS

- 2.1

COMPLIANT

TO-236

(SOT-23)

Top View

Si2337DS (E7)*

*Marking Code

P-Channel MOSFET

Ordering Information: Si2337DS-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

- 80

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

T_C= 70 °C

- 2.2

- 1.75

- 1.2^{b, c}

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

- 0.96^{b, c}

T_A= 70 °C

I_DM

I_S

- 7

Pulsed Drain Current

T_C= 25 °C

- 2.1

Continuous Source-Drain Diode Current

- 0.63^{b, c}

T_A= 25 °C

I_AS

Avalanche Current

L = 0.1 mH

E_AS

6.0

2.5

1.6

Single-Pulse Avalanche Energy

T_C= 25 °C

T_C= 70 °C

P_D

Maximum Power Dissipation

0.76^{b, c}

T_A= 25 °C

0.48^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 50 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

R_thJA

Typical

Maximum

Unit

t ≤ 10 sec

120

166

°C/W

R_thJF

Steady State

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 10 sec.

d. Maximum under Steady State conditions is 166 °C/W.

Document Number: 73533

S-71597-Rev. C, 30-Jul-07

www.vishay.com

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