Datasheet > SI2341DS-T1-GE3

SI2341DS-T1-GE3

更新时间： 2024-09-17 15:51:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	211K
描述
Small Signal Field-Effect Transistor,

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技术参数
数据手册
替代型号

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SI2341DS-T1-GE3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.74
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SI2341DS-T1-GE3 数据手册

Si2341DS

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

I_D(A)^b

- 2.8

Definition

•

TrenchFET^®Power MOSFETS

Compliant to RoHS Directive 2002/95/EC

0.072 at V_GS= - 10 V

0.120 at V_GS= - 4.5 V

- 30

- 2.0

APPLICATIONS

•

Load Switch

•

PA Switch

TO-236

(SOT-23)

Top View

Si2341DS (F1)*

* Marking Code

Ordering Information: Si2341DS-T1-E3 (Lead (Pb)-free)

Si2341DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 30

V_GS

T_A= 25 °C

T_A= 70 °C

- 2.8

- 2.2

- 2.5

- 2.0

Continuous Drain Current (T_J= 150 °C)^b

I_D

Pulsed Drain Current^a

Continuous Source Current (Diode Conduction)^b

I_DM

I_S

- 12

- 0.75

0.9

- 0.6

0.71

0.45

T_A= 25 °C

Power Dissipation^b

P_D

T_A= 70 °C

0.57

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^b

Maximum Junction-to-Ambient^c

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Typical

115

Maximum

140

Unit

140

175

°C/W

R_thJF

Notes:

a. Pulse width limited by maximum junction temperature.

b. Surface mounted on FR4 board, t ≤ 5 s.

c. Surface mounted on FR4 board.

Document Number: 72263

S09-1503-Rev. C, 10-Aug-09

www.vishay.com

12 3 4 5 6 7...9

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SI2341DS-T1-GE3 替代型号

型号	品牌	替代类型	描述	数据表
SI2307CDS-T1-GE3	VISHAY	类似代替	P-Channel 30-V (D-S) MOSFET

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