Datasheet > SI2341DS

SI2341DS

更新时间： 2024-11-06 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	44K
描述
P-Channel 30-V (D-S) MOSFET

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SI2341DS 数据手册

Si2341DS

Vishay Siliconix

New Product

P-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)^b

0.072 @ V = -10 V

-2.8

-2.0

D Load Switch

D PA Switch

-30

0.120 @ V = -4.5 V

TO-236

(SOT-23)

Ordering Information: Si2341DS-T1

Top View

Si2341DS (F1)*

*Marking Code

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

"20

T = 25_C

-2.8

-2.2

-2.5

-2.0

Continuous Drain Current (T = 150_C)

T = 70_C

Pulsed Drain Current

-12

Continuous Source Current (Diode Conduction)

-0.75

0.9

-0.6

0.71

0.45

T = 25_C

Power Dissipation

T = 70_C

0.57

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient

115

140

175

thJA

Maximum Junction-to-Ambient

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Pulse width limited by maximum junction temperature.

b. Surface Mounted on FR4 Board, t v 5 sec.

c. Surface Mounted on FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72263

S-31675—Rev. B, 11-Aug-03

www.vishay.com

12 3 4 5

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