Datasheet > SI2341DS (KI2341DS)

SI2341DS (KI2341DS)

更新时间： 2024-10-15 18:09:59

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	1683K
描述
P-Channel MOSFET

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中文翻译

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数据手册

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SI2341DS (KI2341DS) 数据手册

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SMD Type

MOSFET

P-Channel Enhancement MOSFET

SI2341DS (KI2341DS)

SOT-23

Unit: mm

+0.1

-0.1

2.9

+0.1

-0.1

0.4

■ Features

● VDS (V) =-30V

● ID =-2.8A (VGS =-10V)

● RDS(ON) ＜ 72mΩ (VGS =-10V)

● RDS(ON) ＜ 120mΩ (VGS =-4.5V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Gate

2.Source

3.Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

5 sec

Steady State

Unit

-30

VDS

Gate-Source Voltage

±20

-2.8

-2.2

-2.5

-2.0

Ta = 25℃

Ta = 70℃

Continuous Drain Current

Pulsed Drain Current

Power Dissipation *1

-12

0.9

0.71

0.45

Ta = 25℃

Ta = 70℃

0.57

Thermal Resistance.Junction- to-Ambient *1

Thermal Resistance.Junction- to-Ambient *2

Thermal Resistance.Junction- to-Foot

Junction Temperature

140

175

thJA

thJF

℃/W

℃

150

-55 to 150

Storage Temperature Range

Tstg

*1 Surface Mounted on FR4 Board, t ≤ 5 sec.

*2 Surface Mounted on FR4 Board.

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