Datasheet > SI2336DS

SI2336DS

更新时间： 2024-11-07 09:26:11

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威世 - VISHAY		/
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描述
N-Channel 30 V (D-S) MOSFET

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SI2336DS 数据手册

New Product

Si2336DS

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)()

Q_g(Typ.)

_D(A)^a

5.2

Definition

0.042 at V_GS= 4.5 V

0.046 at V_GS= 2.5 V

0.052 at V_GS= 1.8 V

•

TrenchFET^®Power MOSFET

100 % R_gTested

4.9

5.7 nC

• Compliant to RoHS Directive 2002/95/EC

4.1

APPLICATIONS

•

DC/DC Converters

Boost Converters

TO-236

(SOT-23)

Top View

Si2336DS (N4)*

* Marking Code

Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

5.2

4.1

Continuous Drain Current (T_J= 150 °C)

I_D

4.3^{b, c}

3.5^{b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

T_C= 25 °C

1.5

Continuous Source-Drain Diode Current

1.0^{b, c}

1.8

_C= 70 °C

1.1

P_D

Maximum Power Dissipation

1.25^{b, c}

0.8^{b, c}

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Symbol

Typical

Maximum

100

Unit

R_thJA

R_thJF

t  5 s

Steady State

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 130 °C/W.

Document Number: 71978

S10-2247-Rev. A, 04-Oct-10

www.vishay.com

12 3 4 5 6 7...10

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