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SI2333DS-T1-GE3 PDF预览

SI2333DS-T1-GE3

更新时间: 2024-11-18 20:04:47
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
9页 199K
描述
TRANSISTOR 4100 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal

SI2333DS-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:0.73配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (Abs) (ID):4.1 A
最大漏极电流 (ID):4.1 A最大漏源导通电阻:0.032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI2333DS-T1-GE3 数据手册

 浏览型号SI2333DS-T1-GE3的Datasheet PDF文件第2页浏览型号SI2333DS-T1-GE3的Datasheet PDF文件第3页浏览型号SI2333DS-T1-GE3的Datasheet PDF文件第4页浏览型号SI2333DS-T1-GE3的Datasheet PDF文件第5页浏览型号SI2333DS-T1-GE3的Datasheet PDF文件第6页浏览型号SI2333DS-T1-GE3的Datasheet PDF文件第7页 
Si2333DS  
Vishay Siliconix  
P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 5.3  
- 4.6  
- 3.9  
Available  
TrenchFET® Power MOSFET  
0.032 at VGS = - 4.5 V  
0.042 at VGS = - 2.5 V  
0.059 at VGS = - 1.8 V  
- 12  
APPLICATIONS  
Load Switch  
PA Switch  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2333DS (E3)*  
* Marking Code  
Ordering Information: Si2333DS-T1-E3 (Lead (Pb)-free)  
Si2333DS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 12  
8
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 5.3  
- 4.2  
- 4.1  
- 3.3  
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 20  
Continuous Source Current (Diode Conduction)a, b  
- 1.0  
1.25  
0.8  
- 0.6  
0.75  
0.48  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa, b  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
75  
Maximum  
100  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
120  
40  
166  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
50  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. Pulse width limited by maximum junction temperature.  
Document Number: 72023  
S09-0130-Rev. C, 02-Feb-09  
www.vishay.com  
1

SI2333DS-T1-GE3 替代型号

型号 品牌 替代类型 描述 数据表
SI2333DS-T1-E3 VISHAY

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Halogen-free According to IEC 61249-2-21

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