Datasheet > Si2347DS

Si2347DS

更新时间： 2024-09-18 14:55:55

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描述
P-Channel 30 V (D-S) MOSFET

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Si2347DS 数据手册

Si2347DS

Vishay Siliconix

P-Channel 30 V (D-S) MOSFET

FEATURES

MOSFET PRODUCT SUMMARY

•

TrenchFET^®Power MOSFET

100 % R_gTested

_D(A)^a

V_DS(V)

R_DS(on)() Max.

Q_g(Typ.)

Material categorization:

0.042 at V_GS= - 10 V

0.054 at V_GS= - 6 V

0.068 at V_GS= - 4.5 V

- 5

For definitions of compliance please see

www.vishay.com/doc?99912

- 30

- 4.4

- 3.9

6.9 nC

APPLICATIONS

•

Load Switch

Notebook Adaptor Switch

DC/DC Converter

Power Management

TO-236

(SOT-23)

Top View

Si2347DS (F7)*

* Marking Code

Ordering Information: Si2347DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 30

V_GS

_C= 25 °C

T_C= 70 °C

_A= 25 °C

- 5

- 4

Continuous Drain Current (T_J= 150 °C)

I_D

- 3.8^b,c

- 3^b,c

- 20

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

- 1.4

- 0.63^b,c

1.7

Continuous Source-Drain Diode Current

_A= 25 °C

_C= 25 °C

T_C= 70 °C

_A= 25 °C

1.1

P_D

Maximum Power Dissipation

1.20^{b, c}

0.6^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Typical

100

Maximum

Unit

5 s

Steady State

130

°C/W

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 175 °C/W.

Document Number: 62827

S13-0111-Rev. A, 21-Jan-13

www.vishay.com

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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