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SI2333CDS-T1-GE3 PDF预览

SI2333CDS-T1-GE3

更新时间: 2024-11-07 12:46:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 225K
描述
P-Channel 12-V (D-S) MOSFET

SI2333CDS-T1-GE3 数据手册

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Si2333CDS  
Vishay Siliconix  
P-Channel 12-V (D-S) MOSFET  
FEATURES  
MOSFET PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
D (A)a  
- 5.1  
- 4.5  
- 3.9  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
Definition  
TrenchFET® Power MOSFET  
0.035 at VGS = - 4.5 V  
0.045 at VGS = - 2.5 V  
0.059 at VGS = - 1.8 V  
Compliant to RoHS Directive 2002/95/EC  
- 12  
9 nC  
APPLICATIONS  
Load Switch  
PA Switch  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2333CDS (O3)*  
* Marking Code  
Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free)  
Si2333CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 12  
8
Unit  
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
V
T
T
T
C = 25 °C  
C = 70 °C  
A = 25 °C  
- 7.1  
- 5.7  
- 5.1b, c  
- 4.0b, c  
- 20  
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current  
TC = 25 °C  
- 1.0  
- 0.63b, c  
2.5  
Continuous Source-Drain Diode Current  
T
A = 25 °C  
C = 25 °C  
T
TC = 70 °C  
A = 25 °C  
1.6  
PD  
Maximum Power Dissipation  
W
1.25b, c  
0.8b, c  
T
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
- 55 to 150  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
Typical  
75  
Maximum  
Unit  
5 s  
Steady State  
100  
50  
°C/W  
RthJF  
40  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 5 s.  
d. Maximum under Steady State conditions is 166 °C/W.  
Document Number: 68717  
S09-2433-Rev. C, 16-Nov-09  
www.vishay.com  
1

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