Datasheet > SI2333A

SI2333A

更新时间： 2024-11-22 14:52:03

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SI2333A 数据手册

SI2333A

Features

•

Excellent R_DS(ON)

TrenchFET Power Mosfet

Epoxy Meets UL 94 V-0 Flammability Rating

P-CHANNEL

Moisture Sensitivity Level 1

Halogen Free. “Green” Device ^{(Note 1)}

MOSFET

Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS

Compliant. See Ordering Information)

Maximum Ratings

•

Operating Junction Temperature Range : -55°C to +150°C

Storage Temperature Range: -55°C to +150°C

SOT-23

•

Thermal Resistance: 357°C/W Junction to Ambient ^{(Note 2)}

Thermal Resistance: 113°C/W Junction to Ambient ^{(Note 3)}

Parameter

Rating

-15

Symbol

V_DS

Unit

Drain-Source Voltage

Gate-Source Volltage

Continuous Drain Current

Pulsed Drain Current

V_GS

I_D

±8

-5.6

-15

I_DM

0.35^{(Note 2)}

1.1^{(Note 3)}

P_D

Total Power Dissipation

DIMENSIONS

INCHES

Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,

DIM

NOTE

<900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

MIN MAX MIN MAX

0.110 0.120 2.80 3.04

0.083 0.104 2.10 2.64

0.047 0.055 1.20 1.40

0.034 0.041 0.85 1.05

0.067 0.083 1.70 2.10

0.018 0.024 0.45 0.60

2.Device Mounted on No Heat Sink.

3.Device Mounted on FR-4 Substrate Board, with Minimum Recommended Pad Layout,

Single Side.

0.01 0.15

0.0004 0.006

Internal Structure and Marking Code

0.035 0.043 0.90 1.10

0.003 0.007 0.08 0.18

0.014 0.020 0.35 0.51

0.020

0.50

0.007

0.20

1. GATE

Suggested Solder Pad Layout

2. SOURCE

3. DRAIN

2305.

0.031

0.800

0.035

0.900

0.079

2.000

inches

0.037

0.950

0.037

0.950

Rev.3-4-04092022

1/4

MCCSEMI.COM

12 3 4

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