Datasheet > SI2333CDS

SI2333CDS

更新时间： 2024-11-19 17:15:23

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友台半导体 - UMW		/
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描述
种类:P-Channel;漏源电压（Vdss）:-12V;持续漏极电流（Id）（在25°C时）:-7.1A;Vgs(th)(V):±8;漏源导通电阻:35mΩ@-4.5V

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SI2333CDS 数据手册

UMW

SI2333CDS

P-Channel 12 V (D-S) MOSFET

MOSFET PRODUCT SUMMARY

SOT-23

_D(A)^a

V_DS(V)

R_DS(on)(mΩ)

Q_g(Typ.)

35 at V_GS= - 4.5 V

45 at V_GS= - 2.5 V

59 at V_GS= - 1.8 V

- 5.1

- 4.5

- 3.9

- 12

9 nC

1. GATE

2. SOURCE

3. DRAIN

APPLICATIONS

•

Load Switch

PA Switch

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

V_DS

V_GS

Limit

- 12

Unit

Drain-Source Voltage

Gate-Source Voltage

_C= 25 °C

_C= 70 °C

_A= 25 °C

- 7.1

- 5.7

- 5.1^{b, c}

- 4.0^{b, c}

- 20

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

- 1.0

- 0.63^{b, c}

2.5

Continuous Source-Drain Diode Current

_A= 25 °C

_C= 25 °C

T_C= 70 °C

_A= 25 °C

1.6

P_D

Maximum Power Dissipation

1.25^{b, c}

0.8^{b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, d}

Maximum Junction-to-Foot (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

≤ 5 s

Steady State

100

°C/W

R_thJF

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 166 °C/W.

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