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SI2329DS

更新时间： 2024-10-14 09:26:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	177K
描述
P-Channel 8 V (D-S) MOSFET

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SI2329DS 数据手册

SPICE Device Model Si2329DS

Vishay Siliconix

P-Channel 8 V (D-S) MOSFET

DESCRIPTION

CHARACTERISTICS

The attached SPICE model describes the typical electrical

characteristics of the p-channel vertical DMOS. The

subcircuit model is extracted and optimized over the - 55 °C

to + 125 °C temperature ranges under the pulsed 0 V to 5 V

gate drive. The saturated output impedance is best fit at the

gate bias near the threshold voltage. A novel gate-to-drain

feedback capacitance network is used to model the gate

charge characteristics while avoiding convergence

difficulties of the switched C_gdmodel. All model parameter

values are optimized to provide a best fit to the measured

electrical data and are not intended as an exact physical

interpretation of the device.

• P-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the - 55 °C to + 125 °C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse

Recovery Characteristics

SUBCIRCUIT MODEL SCHEMATIC

DBD

–

ETCV

Note

•

This document is intended as a SPICE modeling guideline and does not constitute a commercial product datasheet. Designers should refer

to the appropriate datasheet of the same number for guaranteed specification limits.

Document Number: 63225

S11-1274-Rev. A, 04-Jul-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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