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SI2323DS-T1-E3 PDF预览

SI2323DS-T1-E3

更新时间: 2024-11-18 05:52:27
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 96K
描述
P-Channel 20-V (D-S) MOSFET

SI2323DS-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.61Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:184102
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT-23 (TO-236)
Samacsys Released Date:2015-04-13 16:59:00Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):3.7 A最大漏极电流 (ID):3.7 A
最大漏源导通电阻:0.039 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI2323DS-T1-E3 数据手册

 浏览型号SI2323DS-T1-E3的Datasheet PDF文件第2页浏览型号SI2323DS-T1-E3的Datasheet PDF文件第3页浏览型号SI2323DS-T1-E3的Datasheet PDF文件第4页浏览型号SI2323DS-T1-E3的Datasheet PDF文件第5页浏览型号SI2323DS-T1-E3的Datasheet PDF文件第6页 
Si2323DS  
Vishay Siliconix  
P-Channel 20-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 4.7  
- 4.1  
- 3.5  
Pb-free  
0.039 at VGS = - 4.5 V  
0.052 at VGS = - 2.5 V  
0.068 at VGS = - 1.8 V  
Available  
APPLICATIONS  
- 20  
RoHS*  
Load Switch  
COMPLIANT  
PA Switch  
TO-236  
(SOT-23)  
G
S
1
2
3
D
Top View  
Si2323DS (D3)*  
* Marking Code  
Ordering Information: Si2323DS-T1  
Si2323DS-T1-E3 (Lead (Pb)-free)  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
5 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
8
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 4.7  
- 3.8  
- 3.7  
- 2.9  
Continuous Drain Current (TJ = 150 °C)a, b  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 20  
Continuous Source Current (Diode Conduction)a, b  
- 1.0  
1.25  
0.8  
- 0.6  
0.75  
0.48  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa, b  
PD  
W
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
75  
Maximum  
100  
Unit  
t 5 s  
Maximum Junction-to-Ambienta  
Maximum Junction-to-Foot (Drain)  
RthJA  
Steady State  
Steady State  
120  
40  
166  
°C/W  
RthJF  
50  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
b. Pulse width limited by maximum junction temperature.  
* Pb containing terminations are not RoHS compliant, exemptions may apply.  
Document Number: 72024  
S-81954-Rev. C, 25-Aug-08  
www.vishay.com  
1

SI2323DS-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI2323DS-T1-GE3 VISHAY

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P-Channel 20-V (D-S) MOSFET
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