Datasheet > SI2328DS_08

SI2328DS_08

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	80K
描述
N-Channel 100-V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SI2328DS_08 数据手册

Si2328DS

Vishay Siliconix

N-Channel 100-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D 100% R_gTested

V_DS(V)

r_DS(on)(W)

I_D(A)

100

0.250 @ V = 10 V

1.5

TO-236

(SOT-23)

Top View

Si2328DS (D8)*

*Marking Code

Ordering Information: Si2328DS-T1

Si2328DS-T1—E3 (Lead (Pb)-Free)

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

100

"20

T = 25_C

1.5

1.2

1.15

0.92

Continuous Drain Current (T = 150__C)

T = 70_C

Pulsed Drain Current

Avalanche Current

L = 0.1 mH

Single Avalanche Energy

1.8

0.6

Continuous Source Current (Diode Conduction)

T = 25_C

1.25

0.80

0.73

0.47

Power Dissipation

T = 70_C

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

100

170

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Document Number: 71796

S-41259—Rev. C, 05-Jul-04

www.vishay.com

12 3 4 5

中文翻译

下载PDF

与SI2328DS_08相关器件

型号	品牌	获取价格	描述	数据表
SI2328DS-T1	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET
SI2328DS-T1-E3	VISHAY	获取价格	N-Channel 100-V (D-S) MOSFET
SI2329DS	VISHAY	获取价格	P-Channel 8 V (D-S) MOSFET
SI2329DS-T1-GE3	VISHAY	获取价格	P-CHANNEL 8-V (D-S) MOSFET - Tape and Reel
SI2331DS	VISHAY	获取价格	P-Channel 1.8-V (G-S) MOSFET
SI2331DS-T1	VISHAY	获取价格	Transistor
SI2331DS-T1-GE3	VISHAY	获取价格	3200mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIAN
SI2333	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
SI2333A	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;
SI2333CDS	VISHAY	获取价格	P-Channel 12-V (D-S) MOSFET