Datasheet > SI2327DS

SI2327DS

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	89K
描述
P-Channel 200-V (D-S) MOSFET

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SI2327DS 数据手册

Si2327DS

Vishay Siliconix

New Product

P-Channel 200-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D Ultra Low On-Resistance

D Small Size

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

Q_g(Typ)

2.35 @ V = −10 V

−0.49

−0.48

−200

8.0

2.45 @ V = −6.0 V

D Active Clamp Circuits in DC/DC Power

Supplies

TO-236

(SOT-23)

Ordering Information: Si2327DS -T1—E3

Top View

Si2327DS (D7)*

*Marking Code

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−200

ꢀ

= 25_C

= 70_C

−0.38

−0.31

−0.49

−0.39

a, b

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−1.0

a, b

Continuous Source Current (Diode Conduction)

Single-Pluse Avalanche Current

Single-Pulse Avalanche Energy

−1.0

−0.6

4.0

0.8

L = 1.0 mH

= 25_C

= 70_C

1.25

0.8

0.75

0.48

a, b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

ꢁ

5 sec

120

100

166

Maximum Junction-to-Ambient

thJA

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature.

Document Number: 73240

S-42448—Rev. A, 10-Jan-05

www.vishay.com

12 3 4 5 6

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