Datasheet > Si2323DDS

Si2323DDS

更新时间： 2024-11-19 14:54:19

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描述
P-Channel 20-V (D-S) MOSFET

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Si2323DDS 数据手册

Si2323DDS

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

TrenchFET^®Power MOSFET

PRODUCT SUMMARY

•

V_DS(V)

R_DS(on)() Max.

Q_g(Typ.)

_D(A)^d

100 % R Tested

Material categorization:

0.039 at V_GS= - 4.5 V

0.050 at V_GS= - 2.5 V

0.075 at V_GS= - 1.8 V

- 5.3

- 4.7

- 3.8

For definitions of compliance please see

www.vishay.com/doc?99912

- 20

13.6 nC

APPLICATIONS

TO-236

(SOT-23)

•

Load Switch

PA Switch

DC/DC Converters

Power Management

Top View

Si2323DDS (E4)*

* Marking Code

P-Channel MOSFET

Ordering Information:

Si2323DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 20

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

- 5.3

- 4.3

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)

I_D

- 4.1^a,b

- 3.2^a,b

- 20

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

T_A= 25 °C

- 1.4

Continuous Source-Drain Diode Current

- 0.8^a,b

1.7

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

1.1

P_D

Maximum Power Dissipation

0.96^a,b

0.62^a,b

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

100

Maximum

130

Unit

R_thJA

t  5 s

°C/W

R_thJF

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 5 s.

c. Maximum under steady state conditions is 175 °C/W.

d. T_C= 25 °C.

Document Number: 64004

S13-1165-Rev. A, 13-May-13

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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