Datasheet > SI2323DS_08

SI2323DS_08

更新时间： 2024-11-18 06:11:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	96K
描述
P-Channel 20-V (D-S) MOSFET

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SI2323DS_08 数据手册

Si2323DS

Vishay Siliconix

P-Channel 20-V (D-S) MOSFET

FEATURES

•

PRODUCT SUMMARY

TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)(Ω)

I_D(A)

- 4.7

- 4.1

- 3.5

Pb-free

0.039 at V_GS= - 4.5 V

0.052 at V_GS= - 2.5 V

0.068 at V_GS= - 1.8 V

Available

APPLICATIONS

- 20

RoHS*

•

Load Switch

COMPLIANT

•

PA Switch

TO-236

(SOT-23)

Top View

Si2323DS (D3)*

* Marking Code

Ordering Information: Si2323DS-T1

Si2323DS-T1-E3 (Lead (Pb)-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

5 s

Steady State

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

- 20

V_GS

T_A= 25 °C

T_A= 70 °C

- 4.7

- 3.8

- 3.7

- 2.9

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

I_DM

I_S

Pulsed Drain Current

- 20

Continuous Source Current (Diode Conduction)^{a, b}

- 1.0

1.25

0.8

- 0.6

0.75

0.48

T_A= 25 °C

T_A= 70 °C

Maximum Power Dissipation^{a, b}

P_D

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

100

Unit

t ≤ 5 s

Maximum Junction-to-Ambient^a

Maximum Junction-to-Foot (Drain)

R_thJA

Steady State

120

166

°C/W

R_thJF

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Pulse width limited by maximum junction temperature.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Document Number: 72024

S-81954-Rev. C, 25-Aug-08

www.vishay.com

12 3 4 5 6

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