Datasheet > SI2321DS

SI2321DS

更新时间： 2024-11-19 22:43:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	42K
描述
P-Channel 20-V (D-S) MOSFET

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SI2321DS 数据手册

Si2321DS

Vishay Siliconix

New Product

P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFETS

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.057 @ V = -4.5 V

-3.3

-2.8

-2.3

D Load Switch

D PA Switch

0.076 @ V = -2.5 V

-20

0.110 @ V = -1.8 V

TO-236

(SOT-23)

Ordering Information: Si2321DS-T1

Top View

Si2321DS *(D1)

*Marking Code

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

-20

T = 25_C

-3.3

-2.6

-2.9

-2.3

Continuous Drain Current (T = 150_C)

T = 70_C

Pulsed Drain Current

-12

Continuous Source Current (Diode Conduction)

-0.74

0.89

0.57

-0.59

0.71

0.45

T = 25_C

Power Dissipation

T = 70_C

Operating Junction and Storage Temperature Range

T , T

-55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t ꢀ 5 sec.

115

140

175

Maximum Junction-to-Ambient

thJA

Steady State

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on FR4 Board.

b. t v5 sec.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72210

S-03986—Rev. A, 19-May-03

www.vishay.com

12 3 4 5

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