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SI2321-TP PDF预览

SI2321-TP

更新时间: 2024-11-20 20:06:23
品牌 Logo 应用领域
美微科 - MCC 开关光电二极管晶体管
页数 文件大小 规格书
4页 333K
描述
Small Signal Field-Effect Transistor, 2.9A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

SI2321-TP 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.68
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):2.9 A最大漏源导通电阻:0.057 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.35 W
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI2321-TP 数据手册

 浏览型号SI2321-TP的Datasheet PDF文件第2页浏览型号SI2321-TP的Datasheet PDF文件第3页浏览型号SI2321-TP的Datasheet PDF文件第4页 
M C C  
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20736 Marilla Street Chatsworth  
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TM  
Micro Commercial Components  
SI2321  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
P-Channel  
Enhancement Mode  
-20V,-2.9A, RDS(ON)=57mΩ@VGS=-4.5V  
R
DS(ON)=76mΩ@VGS=-2.5V  
High dense cell design for extremely low RDS(ON)  
Rugged and reliable  
Field Effect Transistor  
High Speed Switching  
SOT-23 Package  
·
Marking Code: S21 K  
Epoxy meets UL 94 V-0 flammability rating  
SOT-23  
A
·
Moisture Sensitivity Level 1  
Maximum Ratings @ 25 C Unless Otherwise Specified  
O
D
3
1.GATE  
Symbol  
VDS  
ID  
IDM  
IS  
Parameter  
Drain-source Voltage  
Drain Current-Continuous  
Drain Current-Pulsed  
Continuous Source-Drain Diode Current  
Gate-source Voltage  
Rating  
-20  
-2.9  
Unit  
V
A
A
A
2. SOURCE  
B
C
3. DRAIN  
-12  
1
2
-0.59  
±12  
0.35  
357  
VGS  
V
F
E
PD  
Total Power Dissipation  
Thermal Resistance Junction to Ambient  
W
/W  
R
TJ  
θ
JA  
Operating Junction Temperature  
Storage Temperature  
-55 to +150  
-55 to +150  
H
G
J
TSTG  
K
DIMENSIONS  
MM  
INCHES  
MIN  
.110  
DIM  
A
B
MAX  
.120  
.104  
MIN  
2.80  
2.10  
MAX  
3.04  
2.64  
NOTE  
Internal Block Diagram  
.083  
C
D
E
F
G
H
J
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
1.20  
.89  
1.78  
.45  
.013  
.89  
.085  
.37  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
D
K
Suggested Solder  
Pad Layout  
G
.031  
.800  
.035  
.900  
S
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 4  
Revision: C  
2015/05/28  

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